High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
نویسندگان
چکیده
منابع مشابه
Heteroepitaxial Growth of Planar Semipolar (101̄1) GaN by Metalorganic Vapor Phase Epitaxy
We report on the growth of planar semipolar (101̄1) GaN on (112̄3) pre-patterned sapphire. This method allows the growth of semipolar oriented (101̄1) GaN on large scale. By x-ray diffaction, only the peaks of the desired (101̄1) plane could be observed. The in-plane orientations could be determined as [0001]GaN ‖ [0001]sapphire and [112̄0]GaN ‖ [101̄0]sapphire. Scanning electron microscopy, transmis...
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2009
ISSN: 0021-4922,1347-4065
DOI: 10.1143/jjap.48.011102